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Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe
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SYSNO ASEP 0350300 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe Author(s) Gladkov, Petar (URE-Y)
Humlíček, J. (CZ)
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Šimeček, Tomislav (FZU-D)
Paskova, T. (US)
Evans, K. (US)Number of authors 6 Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 312, č. 8 (2010), s. 1205-1209Number of pages 5 s. Language eng - English Country NL - Netherlands Keywords Fe-doping ; Optical characterization ; Hybride vapor phase epitaxy ; Nitrides Subject RIV JB - Sensors, Measurment, Regulation R&D Projects IAA100100719 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z20670512 - URE-Y (2005-2011) AV0Z10100521 - FZU-D (2005-2011) UT WOS 000277039100034 DOI https://doi.org/10.1016/j.jcrysgro.2009.11.032 Annotation Systematic study of optical properties of undoped and Fe-doped substrates grown by hydride vapor phase epitaxy has reveled a strong dependence of the photoluminescence, transmission, reflectivity, and ellipsometric spectra on the Fe-doping level. The changes of the near-band-gap transmission, reflectivity and photoluminescence has been observed and ascribed to the absorption introduced by the density of states tails and the Fe3+-ions incorporated in the GaN-lattice. Several approaches towards quantifying the Fe-doping level are suggested. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2011
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