Number of the records: 1  

Effect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe

  1. 1.
    SYSNO ASEP0350300
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleEffect of Fe doping on optical properties of freestanding semi-insulating HVPE GaN:Fe
    Author(s) Gladkov, Petar (URE-Y)
    Humlíček, J. (CZ)
    Hulicius, Eduard (FZU-D) RID, ORCID, SAI
    Šimeček, Tomislav (FZU-D)
    Paskova, T. (US)
    Evans, K. (US)
    Number of authors6
    Source TitleJournal of Crystal Growth. - : Elsevier - ISSN 0022-0248
    Roč. 312, č. 8 (2010), s. 1205-1209
    Number of pages5 s.
    Languageeng - English
    CountryNL - Netherlands
    KeywordsFe-doping ; Optical characterization ; Hybride vapor phase epitaxy ; Nitrides
    Subject RIVJB - Sensors, Measurment, Regulation
    R&D ProjectsIAA100100719 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    CEZAV0Z20670512 - URE-Y (2005-2011)
    AV0Z10100521 - FZU-D (2005-2011)
    UT WOS000277039100034
    DOI10.1016/j.jcrysgro.2009.11.032
    AnnotationSystematic study of optical properties of undoped and Fe-doped substrates grown by hydride vapor phase epitaxy has reveled a strong dependence of the photoluminescence, transmission, reflectivity, and ellipsometric spectra on the Fe-doping level. The changes of the near-band-gap transmission, reflectivity and photoluminescence has been observed and ascribed to the absorption introduced by the density of states tails and the Fe3+-ions incorporated in the GaN-lattice. Several approaches towards quantifying the Fe-doping level are suggested.
    WorkplaceInstitute of Radio Engineering and Electronics
    ContactPetr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488
    Year of Publishing2011
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.