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Optical line width in semiconductor quantum dots
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SYSNO ASEP 0349148 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Optical line width in semiconductor quantum dots Author(s) Král, Karel (FZU-D) RID
Menšík, Miroslav (UMCH-V) RIDSource Title ICTON: 2009 11TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS. - NEW YORK : IEEE, 2009 / Miguel S. - ISBN 978-1-4244-4825-8 Pages s. 1236-1239 Number of pages 4 s. Action International Conference on Transparent Optical Networks /11./ Event date 28.06.2009-02.07.2009 VEvent location Ponta Delgada University Country PT - Portugal Event type WRD Language eng - English Country US - United States Keywords quantum dots ; optical spectra ; electron-phonon interaction Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects ME 866 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA202/07/0643 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100520 - FZU-D (2005-2011) AV0Z40500505 - UMCH-V (2005-2011) UT WOS 000274048000330 Annotation Theory of the lateral size dependence of the optical line width in quantum dots is presented. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
Number of the records: 1