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Deposition of Germanium Nanowires from Hexamethyldigermane: Influence of the Substrate Pretreatment
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SYSNO ASEP 0346428 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Deposition of Germanium Nanowires from Hexamethyldigermane: Influence of the Substrate Pretreatment Author(s) Dřínek, Vladislav (UCHP-M) RID, ORCID, SAI
Fajgar, Radek (UCHP-M) RID, ORCID, SAI
Klementová, Mariana (UACH-T) RID, SAI, ORCID
Šubrt, Jan (UACH-T) SAI, RIDSource Title Journal of the Electrochemical Society. - : Electrochemical Society - ISSN 0013-4651
Roč. 157, č. 10 (2010), K218-K222Number of pages 5 s. Language eng - English Country US - United States Keywords germanium nanovires ; chemical vapor deposition ; hexamethyldigermane Subject RIV CF - Physical ; Theoretical Chemistry R&D Projects GA203/09/1088 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z40720504 - UCHP-M (2005-2011) AV0Z40320502 - UACH-T (2005-2011) UT WOS 000281306900094 DOI 10.1149/1.3476288 Annotation Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 was used for synthesis of Germanium Nanowires (GeNWs). Pressure during the deposition process was maintained at 90-100 Pa and temperature fixed at 490 °C. GeNWs of several nanometers in diameter and a few microns in length were deposited on various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Si and SiO2 substrates were modified by sputtering Ge to promote GeNW growth. Influence of surface pretreatment (surface roughness or Ge sputtering) is discussed in respect to the previous published theory of intermetalic solution. The results conclude that another mechanism should be taken into account – sticking of oncoming Ge based fragments, clusters etc. on the substrate surface, their nucleation and formation of Ge seeds appropriate for initiation of the GeNW growth. Samples were studied by SEM with EDX, (HR)TEM, FTIR and Raman spectroscopy. Workplace Institute of Chemical Process Fundamentals Contact Eva Jirsová, jirsova@icpf.cas.cz, Tel.: 220 390 227 Year of Publishing 2011
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