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Giant inelastic tunneling in epitaxial graphene mediated by localized states
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SYSNO ASEP 0343359 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Giant inelastic tunneling in epitaxial graphene mediated by localized states Author(s) Červenka, Jiří (FZU-D) RID, ORCID
van der Ruit, K. (NL)
Flipse, C.F.J. (NL)Source Title Physical Review. B - ISSN 1098-0121
Roč. 81, č. 20 (2010), 205403/1-205403/5Number of pages 5 s. Language eng - English Country US - United States Keywords graphene ; silicon carbide ; scanning tunneling microscopy ; inelastic electron tunneling spectroscopy ; phonons Subject RIV BM - Solid Matter Physics ; Magnetism CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000278144500079 DOI 10.1103/PhysRevB.81.205403 Annotation Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the interface layer of a graphene/SiC system show to have essential influence on the electronic structure of graphene. Giant enhancement of inelastic tunneling, reaching 50% of the total tunneling current, has been observed at the localized states on a nanometer-sized graphene monolayer surrounded by defects. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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