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Elastic, electronic and optical properties of SiGe2N4 under pressure: An ab initio study

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    0342932 - ÚVGZ 2011 RIV NL eng J - Journal Article
    Moakafi, M. - Khenata, R. - Bouhemadou, A. - Benkhettou, N. - Rached, D. - Reshak, Ali H
    Elastic, electronic and optical properties of SiGe2N4 under pressure: An ab initio study.
    Physics Letters. A. 27-28, č. 373 (2009), s. 2393-2398. ISSN 0375-9601. E-ISSN 1873-2429
    Institutional research plan: CEZ:AV0Z60870520
    Keywords : elastic constants * electronic properties * optical constants * pressure effects
    Subject RIV: BO - Biophysics
    Impact factor: 2.009, year: 2009

    Permanent Link: http://hdl.handle.net/11104/0185535
     
Number of the records: 1  

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