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Elastic, electronic and optical properties of SiGe2N4 under pressure: An ab initio study
- 1.MOAKAFI, M., KHENATA, R., BOUHEMADOU, A., BENKHETTOU, N., RACHED, D., RESHAK, A. H. Elastic, electronic and optical properties of SiGe2N4 under pressure: An ab initio study. Physics Letters. A. 2009, 27-28(373), 2393-2398. ISSN 0375-9601. E-ISSN 1873-2429. Available: doi: 10.1016/j.physleta.2009.05.004
Number of the records: 1