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Crystallinity of the mixed phase silicon thin films by Raman spectroscopy
- 1.0341950 - FZÚ 2010 RIV NL eng J - Journal Article
Ledinský, Martin - Vetushka, Aliaksi - Stuchlík, Jiří - Mates, Tomáš - Fejfar, Antonín - Kočka, Jan - Štepánek, J.
Crystallinity of the mixed phase silicon thin films by Raman spectroscopy.
[Krystalinita tenké vrstvy křemíku určená Ramanovou spektroskopií.]
Journal of Non-Crystalline Solids. Roč. 354, 19-25 (2008), s. 2253-2257. ISSN 0022-3093. E-ISSN 1873-4812
R&D Projects: GA MŽP(CZ) SN/3/172/05
Keywords : silicon * Raman scattering * chemical vapor deposition * Atomic force and scanning tunneling microscopy * Raman spectroscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.449, year: 2008
Raman spectra of the mixed phase silicon films were studied. The 785 nm excitation was found optimal for crystallinity evaluation.
Studovali jsme Ramanova spektra směsní fází křemíku. Pro určení jejich krystalinity je optimální excitování spekter při 785 nm.
Permanent Link: http://hdl.handle.net/11104/0184789
Number of the records: 1