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LPE growth of InP layers from rare-earth treated melts for radiation detector structures
- 1.0341444 - ÚFE 2010 RIV CH eng J - Journal Article
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
LPE growth of InP layers from rare-earth treated melts for radiation detector structures.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 165, 1-2 (2009), s. 94-97. ISSN 0921-5107. E-ISSN 1873-4944
R&D Projects: GA ČR(CZ) GP102/08/P617; GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth elements * III-V semiconductors
Subject RIV: JJ - Other Materials
Impact factor: 1.715, year: 2009
Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to REs high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP layers by liquid phase epitaxy with Pr admixture to the growth melt. We employ low temperature photoluminescence, capacitance-voltage and Hall effect measurements to show that optimized concentration of Pr admixture results in the growth of high purity layers of both conductivity types. We discuss the application of p-type InP layers in radiation detectors.
Permanent Link: http://hdl.handle.net/11104/0184438
Number of the records: 1