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InAs/GaAs quantum dot structures emitting in the 1.55 μm band
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SYSNO ASEP 0337368 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title InAs/GaAs quantum dot structures emitting in the 1.55 μm band Title Struktura s InAs/GaAs kvantovými tečkami emitující na 1.55 μm Author(s) Hazdra, P. (CZ)
Oswald, Jiří (FZU-D) RID, ORCID
Komarnitskyy, V. (CZ)
Kuldová, Karla (FZU-D) RID, ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Vyskočil, Jan (FZU-D) RID
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAINumber of authors 8 Source Title IOP Conference Series: Materials Science and Engineering. - : Institute of Physics Publishing - ISSN 1757-8981
Roč. 6, č. 1 (2009), 012007/1-012007/4Number of pages 4 s. Language eng - English Country CH - Switzerland Keywords quantum dots ; InAs ; GaAs ; photoluminescence Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects IAA100100719 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GA202/09/0676 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) DOI 10.1088/1757-899X/6/1/012007 Annotation We investigated different capping layers covering InAs quantum dot structures grown on GaAs substrates by metalorganic vapor phase epitaxy in order to receive strong photoluminescence at 1.55 μm. Analysis of photoluminescence and microscopy data supported by calculation of quantum dot electron states shows that this is caused both by the change of the electronic-barrier structure and by the increase of the height of the overgrown quantum dots. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2012
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