Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

Hazdra, P.; Oswald, Jiří; Komarnitskyy, V.; Kuldová, Karla; Hospodková, Alice; Hulicius, Eduard; Pangrác, Jiří

doi:https://dx.doi.org/10.1016/j.spmi.2008.12.002

Number of the records: 1

Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs

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SYSNO ASEP	0330532
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs
Title	Vliv tloušťky krycí vrstvy na elektronové stavy v samouspořádaných InAs kvantových tečkách na GaAs připravených metodou epitaxe z organokovových sloučenin
Author(s)	Hazdra, P. (CZ) Oswald, Jiří (FZU-D)_{RID, ORCID} Komarnitskyy, V. (CZ) Kuldová, Karla (FZU-D)_{RID, ORCID} Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI}
Source Title	Superlattices and Microstructures. - : Elsevier - ISSN 0749-6036 Roč. 46, 1-2 (2009), 324-327
Number of pages	4 s.
Language	eng - English
Country	GB - United Kingdom
Keywords	quantum dots ; metal-organic vapor phase epitaxy ; indium arsenide ; gallium arsenide ; photoluminescence ; AFM
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GA202/06/0718 GA ČR - Czech Science Foundation (CSF)
	IAA100100719 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z10100521 - FZU-D (2005-2011)
UT WOS	000267444900056
DOI	10.1016/j.spmi.2008.12.002
Annotation	In0.23Ga0.77As capping reduces residual strain and preserves the shape of quantum dots. As a result, the photoluminescence maximum shifts up to desired wavelength of 1.55μm.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2010

Number of the records: 1