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Electrochemical Charging of Individual Single-Walled Carbon Nanotubes

  1. 1.
    SYSNO ASEP0329762
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleElectrochemical Charging of Individual Single-Walled Carbon Nanotubes
    TitleElektrochemické nabíjení individuálních jednostěnných uhlíkových nanotub
    Author(s) Kalbáč, Martin (UFCH-W) RID, ORCID
    Farhat, H. (US)
    Kavan, Ladislav (UFCH-W) RID, ORCID
    Kong, J. (US)
    Sasaki, K. (JP)
    Saito, R. (JP)
    Dresselhaus, M. S. (US)
    Source TitleACS Nano. - : American Chemical Society - ISSN 1936-0851
    Roč. 3, č. 8 (2009), s. 2320-2328
    Number of pages9 s.
    Languageeng - English
    CountryUS - United States
    Keywordssingle-walled carbon nanotubes ; Raman spectroscopy ; electrochemical gating ; spectroelectrochemistry
    Subject RIVCG - Electrochemistry
    R&D ProjectsGC203/07/J067 GA ČR - Czech Science Foundation (CSF)
    IAA400400804 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    IAA400400911 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    KAN200100801 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    ME09060 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    CEZAV0Z40400503 - UFCH-W (2005-2011)
    UT WOS000269145000038
    DOI10.1021/nn9004318
    AnnotationThe influence of the electrode potential on the electronic structure of individual single-walled carbon nanotubes is studied using Raman spectroscopy. By analyzing the radial breathing mode intensity versus electrode potential profiles in the Raman spectra at many different laser excitation energies, we show that the charging of individual carbon nanotubes causes a broadening of the resonant Raman profiles (resonance window). This effect is observed for both a semiconducting and a metallic tube. The broadening of the resonance Raman profiles already begins at potentials where the first electronic states of a particular tube are filled or depleted, The important consequence of this effect is a striking difference between the Raman intensity versus potential profiles of metallic and semiconducting tubes.
    WorkplaceJ. Heyrovsky Institute of Physical Chemistry
    ContactMichaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
    Year of Publishing2010
Number of the records: 1  

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