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On the magnetic properties of Gd implanted GAN
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SYSNO ASEP 0313176 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title On the magnetic properties of Gd implanted GAN Title O magnetických vlastnostech GaN s implantovaným Gd Author(s) Hejtmánek, Jiří (FZU-D) RID, ORCID
Knížek, Karel (FZU-D) RID, ORCID
Maryško, Miroslav (FZU-D) RID
Jirák, Zdeněk (FZU-D) RID, ORCID, SAI
Sedmidubský, D. (CZ)
Sofer, Z. (CZ)
Peřina, Vratislav (UJF-V) RID
Hardtdegen, H. (DE)
Buchal, C. (DE)Source Title Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
Roč. 103, č. 7 (2008), 07D107/1-07D107/3Number of pages 3 s. Language eng - English Country US - United States Keywords ferromagnetic materials ; gadolinium ; gallium compounds ; III-V semiconductors ; ion implantation Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA104/06/0642 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) AV0Z10480505 - UJF-V (2005-2011) UT WOS 000255043200387 DOI 10.1063/1.2830644 Annotation Thin films of GaN semiconductor, grown on sapphire substrate, have been implanted using a flux of Gd ions. The material obtained exhibits weak ferromagnetism persisting up to 700 K. The experiments show that ferromagnetic ordering is property of weakly doped Ga1-xGdxN (x<0.01), while higher Gd concentrations lead to Curie-type paramagnetism only. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2009
Number of the records: 1