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Lithographically and electrically controlled strain effects on AMR in (Ga,Mn)As

  1. 1.
    SYSNO0312859
    TitleLithographically and electrically controlled strain effects on AMR in (Ga,Mn)As
    TitleLitograficky a elektricky ovladane vlivy mechanickych deformaci na AMR v (Ga,Mn)As
    Author(s) De Ranieri, E. (GB)
    Rushforth, A.W. (GB)
    Výborný, Karel (FZU-D) RID, ORCID
    Rana, U. (GB)
    Ahmad, E. (GB)
    Campion, R. P. (GB)
    Foxon, C. T. (GB)
    Gallagher, B. L. (GB)
    Irvine, A.C. (GB)
    Wunderlich, J. (GB)
    Jungwirth, Tomáš (FZU-D) RID, ORCID
    Source Title New Journal of Physics. Roč. 10, č. 6 (2008), 065003/1-065003/19. - : Institute of Physics Publishing
    Document TypeČlánek v odborném periodiku
    Grant LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    KJB100100802 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    GEFON/06/E002 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z10100521 - FZU-D (2005-2011)
    Languageeng
    CountryDE
    Keywords anomalous Hall effect * Keldysh formalism * Rashba system
    Permanent Linkhttp://hdl.handle.net/11104/0163813
     
Number of the records: 1  

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