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Lithographically and electrically controlled strain effects on AMR in (Ga,Mn)As

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    0312859 - FZÚ 2009 RIV DE eng J - Journal Article
    De Ranieri, E. - Rushforth, A.W. - Výborný, Karel - Rana, U. - Ahmad, E. - Campion, R. P. - Foxon, C. T. - Gallagher, B. L. - Irvine, A.C. - Wunderlich, J. - Jungwirth, Tomáš
    Lithographically and electrically controlled strain effects on AMR in (Ga,Mn)As.
    [Litograficky a elektricky ovladane vlivy mechanickych deformaci na AMR v (Ga,Mn)As.]
    New Journal of Physics. Roč. 10, č. 6 (2008), 065003/1-065003/19. ISSN 1367-2630. E-ISSN 1367-2630
    R&D Projects: GA MŠMT LC510; GA AV ČR KJB100100802; GA AV ČR KAN400100652; GA ČR GEFON/06/E002
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : anomalous Hall effect * Keldysh formalism * Rashba system
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 3.440, year: 2008 ; AIS: 1.863, rok: 2008
    DOI: https://doi.org/10.1088/1367-2630/10/6/065003
    Permanent Link: http://hdl.handle.net/11104/0163813
     
Number of the records: 1  

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