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Microscopic study of the H.sub.2./sub.O vapor treatment of the silicon grain boundaries
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SYSNO ASEP 0312592 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Microscopic study of the H2O vapor treatment of the silicon grain boundaries Title Mikroskopická studie ošetřování hranic zrn v křemíku vodní parou Author(s) Honda, Shinya (FZU-D)
Mates, Tomáš (FZU-D) RID, ORCID
Rezek, Bohuslav (FZU-D) RID, ORCID
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Kočka, Jan (FZU-D) RID, ORCID, SAISource Title Journal of Non-Crystalline Solids. - : Elsevier - ISSN 0022-3093
Roč. 354, č. 19-25 (2008), s. 2310-2313Number of pages 4 s. Language eng - English Country NL - Netherlands Keywords polycrystalline silicon films ; H2O vapor treatment ; potential ; crystalline disorder ; stress ; defects ; passivation Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KAN400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GD202/05/H003 GA ČR - Czech Science Foundation (CSF) IAA1010316 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) IAA1010413 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) KJB100100512 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) SN/3/172/05 GA MŽP - Ministry of Environment (MŽP) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000256500400054 DOI https://doi.org/10.1016/j.jnoncrysol.2007.09.107 Annotation Annealing in H2O vapor lead to passivation of polycrystalline silicon grain boundaries. Mechanism was studied by Kelvin force microscopy and micro-Raman spectroscopy. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2009
Number of the records: 1