- Characterization of AgAsS and AgSbS amorphous films prepared by pulse…
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Characterization of AgAsS and AgSbS amorphous films prepared by pulsed laser deposition

  1. 1.
    SYSNO ASEP0309645
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleCharacterization of AgAsS and AgSbS amorphous films prepared by pulsed laser deposition
    TitleCharakterizace AgAsS a amorfní AgSbS filmy připravené pulsní laserovou depozicí
    Author(s) Wágner, T. (CZ)
    Krbal, M. (CZ)
    Gutwirth, J. (CZ)
    Němec, P. (CZ)
    Vlček, M. (CZ)
    Frumar, M. (CZ)
    Peřina, Vratislav (UJF-V) RID
    Macková, Anna (UJF-V) RID, ORCID, SAI
    Hnatowicz, Vladimír (UJF-V) RID
    Kasap, S. O. (CA)
    Vlček, Milan (UMCH-V) RID, ORCID
    Source TitleSurface and Interface Analysis. - : Wiley - ISSN 0142-2421
    Roč. 36, č. 8 (2004), s. 1140-1143
    Number of pages4 s.
    Languageeng - English
    CountryGB - United Kingdom
    Keywordschalcogenide glasses ; thin films ; pulsed laser ablation
    Subject RIVBG - Nuclear, Atomic and Molecular Physics, Colliders
    CEZAV0Z1048901 - UJF-V
    AV0Z4050913 - UMCH-V
    UT WOS000223652500120
    DOI https://doi.org/10.1002/sia.1860
    AnnotationThin amorphous films of AgAsS and AgSbS systems have been prepared by pulsed laser deposition (PLD) at five different conditions, i.e. at different pulse energies and pulse repetition intervals of the KrF laser. The obtained films were analysed by RBS, ERDA (elastic recoil detection analysis) spectral analysis and also EDXA elemental analysis. The results of RBS and EDXA analysis were compared to the composition of the source bulk glass materials. Film compositions varied compared to the source material according to the deposition condition with film composition close to the stoichiometric one, i.e. AgAsS2 and AgSbS2 could be prepared by the PLD technique. RBS spectroscopy is known as an important tool for establishing depth distribution of the elements within the prepared films. The thickness of the films was chosen so that depth profiling of the entire layer is possible. ERDA allowed us to find, apart from all obvious atoms (Ag, As, Sb, S), also H atoms present in the films.
    WorkplaceNuclear Physics Institute
    ContactMarkéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
    Year of Publishing2009
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