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InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
- 1.Hazdra, P., Oswald, J., Atef, M., Kuldová, K., Hospodková, A., Hulicius, E., Pangrác, J. InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance. Materials Science and Engineering B-Advanced Functional Solid-State Materials. 2008, 147(-), 175-178. ISSN 0921-5107. E-ISSN 1873-4944.
Number of the records: 1