- InAs/GaAs quantum dot structures covered by InGaAs strain reducing la…
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InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance

  1. 1.
    Hazdra, P., Oswald, J., Atef, M., Kuldová, K., Hospodková, A., Hulicius, E., Pangrác, J. InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance. Materials Science and Engineering B-Advanced Functional Solid-State Materials. 2008, 147(-), 175-178. ISSN 0921-5107. E-ISSN 1873-4944.
Number of the records: 1  

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