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Annealing of Bi.sub.2./sub.Te.sub.3./sub. thin films prepared by pulsed laser deposition
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SYSNO ASEP 0304240 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper R&D Document Type M - Uspořádání konference Title Annealing of Bi2Te3 thin films prepared by pulsed laser deposition Author(s) Pavelka, Martin (FZU-D)
Zeipl, Radek (URE-Y)
Jelínek, Miroslav (FZU-D) RID, ORCID
Walachová, Jarmila (URE-Y)
Studnička, Václav (FZU-D) RIDIssue data Brno: Vysoké učení technické, Fakulta strojního inženýrství, 2003 ISBN 80-214-2486-9 Source Title International Conference NANO'03. Proceedings / Šandera P. Pages s. 104-108 Number of pages 5 s. Action NANO'03 Event type K - Konference Event date 21.10.2003-23.10.2003 VEvent location Brno Country CZ - Czech Republic Event type EUR Language eng - English Country CZ - Czech Republic Keywords thin films ; thermoelectricity Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects GA202/02/0098 GA ČR - Czech Science Foundation (CSF) IAA1010110 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z2067918 - URE-Y Annotation Bi2Te3 thin films were prepared by laser ablation /PLD/ at room temperature and then annealed in argon atmosphere. Anneling is a widely used method of film properties /primarily crystallinity/ improvement. The influence of annealing on transport properties was studied. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2004
Number of the records: 1