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Novel approaches to LPE preparation of high quality of InP semiconductor layers for radiation detectors

  1. 1.
    SYSNO ASEP0304201
    Document TypeA - Abstract
    R&D Document TypeThe record was not marked in the RIV
    R&D Document TypeNení vybrán druh dokumentu
    TitleNovel approaches to LPE preparation of high quality of InP semiconductor layers for radiation detectors
    Author(s) Procházková, Olga (URE-Y)
    Zavadil, Jiří (URE-Y) RID
    Grym, Jan (URE-Y)
    Žďánský, Karel (URE-Y)
    Year of issue2003
    Source TitleBook of Abstracts 1st International Meeting on Applied Physics
    s. 201
    Number of pages1 s.
    ActionAPHYS-2003 /1./
    Event typeK - Konference
    Event date13.10.2003-18.10.2003
    VEvent locationBadajoz
    CountryES - Spain
    Event typeEUR
    Languageeng - English
    CountryES - Spain
    Keywordsrare earth compounds ; photoluminescence ; Hall effect
    Subject RIVJA - Electronics ; Optoelectronics, Electrical Engineering
    R&D ProjectsGA102/03/0379 GA ČR - Czech Science Foundation (CSF)
    KSK1010104 Projekt 04/01:4043 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    CEZAV0Z2067918 - URE-Y
    AnnotationThe preparation and characterization of thick InP layers by LPE with admixture of Ce, Tb, Dy and Yb is reported. Measaurement of temperature dependent Hall effect, C-V characteristics and photoluminescence spectra show the change of n-p type conductivity and considerable improvement of structural and electro-optical parameters for all studied rare-earth elements. Mn was identified as dominant acceptor impurity in the case of Tb and Dy addition. In the case of Ce and Yb the dominant acceptor was identified as isoelectronic Ce or Yb on the In site.
    WorkplaceInstitute of Radio Engineering and Electronics
    ContactPetr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488
    Year of Publishing2004

Number of the records: 1  

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