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Novel approaches to LPE preparation of high quality of InP semiconductor layers for radiation detectors
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SYSNO ASEP 0304201 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title Novel approaches to LPE preparation of high quality of InP semiconductor layers for radiation detectors Author(s) Procházková, Olga (URE-Y)
Zavadil, Jiří (URE-Y) RID
Grym, Jan (URE-Y)
Žďánský, Karel (URE-Y)Year of issue 2003 Source Title Book of Abstracts 1st International Meeting on Applied Physics
s. 201Number of pages 1 s. Action APHYS-2003 /1./ Event type K - Konference Event date 13.10.2003-18.10.2003 VEvent location Badajoz Country ES - Spain Event type EUR Language eng - English Country ES - Spain Keywords rare earth compounds ; photoluminescence ; Hall effect Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects GA102/03/0379 GA ČR - Czech Science Foundation (CSF) KSK1010104 Projekt 04/01:4043 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z2067918 - URE-Y Annotation The preparation and characterization of thick InP layers by LPE with admixture of Ce, Tb, Dy and Yb is reported. Measaurement of temperature dependent Hall effect, C-V characteristics and photoluminescence spectra show the change of n-p type conductivity and considerable improvement of structural and electro-optical parameters for all studied rare-earth elements. Mn was identified as dominant acceptor impurity in the case of Tb and Dy addition. In the case of Ce and Yb the dominant acceptor was identified as isoelectronic Ce or Yb on the In site. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2004
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