Number of the records: 1
Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as based electrode
SYS 0304105 LBL 03092nam^^2200397^^^450 005 20240103180953.1 101 0-
$a eng 102 $a DE 200 1-
$a Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as based electrode 215 $a 6 s. 463 -1
$1 001 cav_un_epca*0290773 $1 011 $a 1610-1634 $1 200 1 $a Physica Status Solidi C $e Conferences and critical reviews $v Roč. 0, č. 3 (2003), s. 986-991 610 1-
$a field emission electron microscopy 610 1-
$a semiconductor quantum wells 610 1-
$a spectroscopy 700 -1
$3 cav_un_auth*0101757 $a Vaniš $b Jan $p URE-Y $w Synthesis and characterization of nanomaterials $4 070 $T Ústav fotoniky a elektroniky AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0020931 $a Chow $b D. H. $y US $4 070 701 -1
$3 cav_un_auth*0100432 $a Pangrác $b Jiří $p FZU-D $w Semiconductors $4 070 $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0101746 $a Šroubek $b Filip $p URE-Y $4 070 $T Ústav fotoniky a elektroniky AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0099062 $a McGill $b T. C. $y US $4 070 701 -1
$3 cav_un_auth*0101765 $a Walachová $b Jarmila $p URE-Y $4 070 $T Ústav fotoniky a elektroniky AV ČR, v. v. i.
Number of the records: 1