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Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as based electrode

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    0304105 - URE-Y 20030017 RIV DE eng J - Journal Article
    Vaniš, Jan - Chow, D. H. - Pangrác, Jiří - Šroubek, Filip - McGill, T. C. - Walachová, Jarmila
    Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as based electrode.
    Physica Status Solidi C. Roč. 0, č. 3 (2003), s. 986-991. ISSN 1610-1634.
    [EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest, 26.05.2002-29.05.2002]
    R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4045
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : field emission electron microscopy * semiconductor quantum wells * spectroscopy
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0114247
     

Number of the records: 1  

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