Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE
1.
SYSNO ASEP
0303955
Document Type
J - Journal Article
R&D Document Type
Journal Article
Subsidiary J
Ostatní články
Title
Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE
Author(s)
Agert, C. (DE) Gladkov, Petar (URE-Y) Bett, A. W. (DE)
Source Title
Semiconductor Science and Technology. - : Institute of Physics Publishing
- ISSN 0268-1242
Roč. 17, č. 1 (2002), s. 39-46
Number of pages
8 s.
Language
eng - English
Country
GB - United Kingdom
Keywords
photoluminescence ; silicon ; epitaxial growth
Subject RIV
BM - Solid Matter Physics ; Magnetism
CEZ
AV0Z2067918 - URE-Y
Annotation
We study electrical properties and the photoluminescence /PL/ of Si-doped bulk GaSb grown by metal-organic vapor phase epitaxy. Si was found to behave a substitution shallow acceptor in GaSb with activation energy of 9 meV, which is responsible for the 0.8 eV line in the PL spectrum of GaSb.
