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Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE
- 1.Agert, C., Gladkov, P., Bett, A. W. Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE. Semiconductor Science and Technology. 2002, 17(1), 39-46. ISSN 0268-1242. E-ISSN 1361-6641.
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