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The comparison of the influence of Pr, Nd and Tb on the characteristics of InP epitaxial layers

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    SYSNO ASEP0303870
    Document TypeA - Abstract
    R&D Document TypeThe record was not marked in the RIV
    R&D Document TypeNení vybrán druh dokumentu
    TitleThe comparison of the influence of Pr, Nd and Tb on the characteristics of InP epitaxial layers
    Author(s) Grym, Jan (URE-Y)
    Procházková, Olga (URE-Y)
    Zavadil, Jiří (URE-Y) RID
    Žďánský, Karel (URE-Y)
    Year of issue2001
    Source TitleJaszowiec 2001
    s. 59
    Number of pages1 s.
    ActionInternational School on the Physics of Semiconducting Compounds /30./
    Event typeK - Konference
    Event date01.06.2001-08.06.2001
    VEvent locationUstron-Jaszowiec
    CountryPL - Poland
    Event typeEUR
    Languageeng - English
    CountryPL - Poland
    Keywordsliquid phase epitaxial growth ; rare earth compounds ; III-V semiconductors
    Subject RIVJA - Electronics ; Optoelectronics, Electrical Engineering
    R&D ProjectsGA102/99/0341 GA ČR - Czech Science Foundation (CSF)
    KSK1010601 Projekt 7/96/K:4073 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    CEZAV0Z2067918 - URE-Y
    AnnotationThe behaviour and the impact of individual rare-earth elements (REE) used in the InP LPE growth process were compared. Structural, electrical and optical properties of InP layers exhibit a significant dependence on the presentace of REE. The dislocation density was reduced by a half order of magnitude. The concentration of shallow impurities was reduced by up to three orders of magnitude. When increasing the concentration of Pr or Tb in the growth melt the reversal of electrical conductivity occurs.
    WorkplaceInstitute of Radio Engineering and Electronics
    ContactPetr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488
    Year of Publishing2002

Number of the records: 1  

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