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The comparison of the influence of Pr, Nd and Tb on the characteristics of InP epitaxial layers
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SYSNO ASEP 0303870 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title The comparison of the influence of Pr, Nd and Tb on the characteristics of InP epitaxial layers Author(s) Grym, Jan (URE-Y)
Procházková, Olga (URE-Y)
Zavadil, Jiří (URE-Y) RID
Žďánský, Karel (URE-Y)Year of issue 2001 Source Title Jaszowiec 2001
s. 59Number of pages 1 s. Action International School on the Physics of Semiconducting Compounds /30./ Event type K - Konference Event date 01.06.2001-08.06.2001 VEvent location Ustron-Jaszowiec Country PL - Poland Event type EUR Language eng - English Country PL - Poland Keywords liquid phase epitaxial growth ; rare earth compounds ; III-V semiconductors Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects GA102/99/0341 GA ČR - Czech Science Foundation (CSF) KSK1010601 Projekt 7/96/K:4073 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z2067918 - URE-Y Annotation The behaviour and the impact of individual rare-earth elements (REE) used in the InP LPE growth process were compared. Structural, electrical and optical properties of InP layers exhibit a significant dependence on the presentace of REE. The dislocation density was reduced by a half order of magnitude. The concentration of shallow impurities was reduced by up to three orders of magnitude. When increasing the concentration of Pr or Tb in the growth melt the reversal of electrical conductivity occurs. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2002
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