0303799 - URE-Y 20010077 RIV DE eng J - Journal Article
Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Role of ç-elements in the growth of InP layers for radiation detectors.
Crystal Research and Technology. Roč. 36, 8/10 (2001), s. 979-987. ISSN 0232-1300. E-ISSN 1521-4079.
[Polish Conference on Crystal Growth /PCCG 6./. Poznan, 20.05.2001-23.05.2001]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010104 Projekt 04/01:4043
Institutional research plan: CEZ:AV0Z2067918
Keywords : liquid phase epitaxial growth * rare earth metals * semiconductor materials
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 0.536, year: 2001

We report the effect of ç-elements (Er, Ho, Nd, Pr, Tb and Yb) during the LPE on the growth process and structural, electrical and optical properties of InP thick epitaxial layers for applications in ionizing radiation detector structures. Room temperature Hall effect measurements revealed p-type conductivity Tb, Pr or Yb admixture exceeding certain limiting concentration. These layers could readily be used for the preparation of ŕ-particles detector, when detection will be mediated via the depletion layer of high quality Schottky contact.
Permanent Link: http://hdl.handle.net/11104/0113983