0303691 - URE-Y 20000086 RIV US eng C - Conference Paper (international conference)
Procházková, Olga - Šrobár, Fedor - Jelínek, František - Šaroch, Jaroslav - Žďánský, Karel
Schottky bariers as a diagnostic tool for evaluating properties of InP epitaxial layers prepared from melts containing rare-earth elements.
Piscataway: IEEE, 2000. ISBN 0-7803-5939-9. In: ASDAM 2000. Conference Proceedings of the 3rd International Euro Conference on Advanced Semiconductor Devices and Microsystems. - (Osvald, J.; Haščík, Š.; Kuzmík, J.; Breza, J.), s. 197-199
[ASDAM 2000. Smolenice (SK), 16.10.2000-18.10.2000]
R&D Projects: GA ČR GA102/99/0341
Institutional research plan: CEZ:AV0Z2067918
Keywords : semiconductors * rare earth compounds
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Properties of Schottky diodes manufactured from InP:(Er) layers are compared with those of diodes prepared under otherwise similar conditions but without the admixture of Er in the growth solution. Presence of Er in the preparation process was found to have beneficial effects on both the reverse and forward current magnitudes and on the diode ideality factor. Capability of Schottky diodes to generate higher-order harmonics in suitably configured circuits was also investigated.
Permanent Link: http://hdl.handle.net/11104/0113878