0303686 - URE-Y 20000043 RIV CN eng J - Journal Article
Žďánský, Karel - Procházková, Olga - Nohavica, Dušan
Temperature dependence of electron Hall concetration in n-type InP and n-type In_0.5Ga_0.5P.
Science Foundation in China. Roč. 7, č. 2 (1999), s. 25-29
[Chinese-Czech Symposium Advanced Materials and Devices for Optoelectronics /2./. Beijing, 13.09.1999-14.09.1999]
R&D Projects: GA ČR GA102/99/0341
Grant - others:AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074
Institutional research plan: CEZ:AV0Z2067918
Keywords : III-V semiconductors * Hall effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Temperature dependence of electron Hall concentration is calculated is nondegenerate statistics by taking into account two types of donors and an acceptor and with electron transport in the impurity band of shallow donors in parallel with the conduction band considered. The experimental dependence is well expressed by the calculated one; the concentrations of the two types of donors and of acceptors are evaluated for sets of InP and In_0.5Ga_0.5P layers grown by LPE on semi-insulating substrates.
Permanent Link: http://hdl.handle.net/11104/0113873