Temperature dependence of electron hall concetration in n-type InP and n-type In.sub.0.5./sub.Ga.sub.0.5./sub.P

Name: Temperature dependence of electron hall concetration in n-type InP and n-type In.sub.0.5./sub.Ga.sub.0.5./sub.P
Availability: OutOfStock

Žďánský, Karel; Procházková, Olga; Nohavica, Dušan

Number of the records: 1

Temperature dependence of electron hall concetration in n-type InP and n-type In.sub.0.5./sub.Ga.sub.0.5./sub.P

1.

SYSNO ASEP	0303478
Document Type	C - Proceedings Paper (int. conf.)
R&D Document Type	Conference Paper
Title	Temperature dependence of electron hall concetration in n-type InP and n-type In_0.5Ga_0.5P
Author(s)	Žďánský, Karel (URE-Y) Procházková, Olga (URE-Y) Nohavica, Dušan (URE-Y)
Issue data	Beijing: [Institute of Semiconductors, Chinese Academy of Sciences], 1999
Source Title	Proceedings The Second Chinese-Czech Symposium Advenced Materials and Devices for Optoelectronics / Yu J.
Pages	s. 52-58
Number of pages	7 s.
Action	Chinese-Czech Symposium Advanced Materials and Devices for Optoelectronics /2./
Event date	13.09.1999-14.09.1999
VEvent location	Beijing
Country	CN - China
Language	eng - English
Country	CN - China
Keywords	III-V semiconductors ; Hall effect
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
R&D Projects	GA102/99/0341 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z2067918 - URE-Y
Workplace	Institute of Radio Engineering and Electronics
Contact	Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488
Year of Publishing	2000

Number of the records: 1