Design and Stabilization of the Extended-cavity Semiconductor Laser

0205375 - UPT-D 20010014 RIV US eng C - Conference Paper (international conference)
Lazar, Josef - Číp, Ondřej - Jedlička, Petr
Design and Stabilization of the Extended-cavity Semiconductor Laser.
Proceedings of the 12th Czech-Slovak-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics (Proc. SPIE 4356). Washington: SPIEThe International Society for Optical Engineering, 2001 - (Peřina, J.; Hrabovský, M.; Křepelka, J.), s. 303-308. ISBN 0-8194-4047-7. ISSN 0277-786X.
[SPIE: Wave and Quantum Aspects of Contemporary Optics. Velké Losiny (CZ), 12.09.2000-15.09.2000]
R&D Projects: GA ČR GA101/98/P270; GA AV ČR IAA2065803
Institutional research plan: CEZ:AV0Z2065902
Keywords : extended-cavity semiconductor laser
Subject RIV: BH - Optics, Masers, Lasers

We present a tunable extended-cavity semiconductor laser (ECL) system based on the Littman configuration emitting in the visible region of spectra with the wavelength close to the 633 nm of He-Ne lasers. It has been frequency stabilized to Doppler free hyperfine transitions in molecular iodine. The stability was measured compared to the reference He-Ne-I₂ laser system, the present most commonly used laser primary strandard. while the semiconductor laser was locked on components of the P(33) 6-3 transition close enough to the reference R(127) 11-5 line to arrange a beat frequency counting. A relative stability of 4x10^-12 over a 100 s integration time was achieved. The laser configuration allowed a mode-hop free tuning over a range including a group of strong overlapping transitions R(60) 8-4, R(125) 9-4 and P(54) 8-4 with higher signal-to-noise ratio.
Permanent Link: http://hdl.handle.net/11104/0100989