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Mechanism of the film composition formation during magnetron sputtering of WTi
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SYSNO ASEP 0185385 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Mechanism of the film composition formation during magnetron sputtering of WTi Author(s) Shaginyan, L. R. (UA)
Mišina, M. (CZ)
Kadlec, S. (CZ)
Jastrabík, L. (CZ)
Macková, Anna (UJF-V) RID, ORCID, SAI
Peřina, Vratislav (UJF-V) RIDSource Title Journal of Vacuum Science & Technology A : Vacuum, Surfaces and Films. - : AIP Publishing - ISSN 0734-2101
Roč. 19, č. 5 (2001), s. 2554-2566Number of pages 13 s. Language eng - English Country US - United States Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders R&D Projects GV202/97/K038 GA ČR - Czech Science Foundation (CSF) KSK1010104 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) Annotation The WTi films were deposited by an unbalanced magnetron sputtering of a WTi (70:30 at. %) alloy target. The influence of the working gas (Ar) pressure, substrate bias, and substrate location on the composition of films was studied. The films deposited at low working gas pressures (<1 Pa) onto electrically floating substrates were largely depleted in Ti while the composition of films deposited at high argon pressure (25 Pa) was close to that of the target. The ion bombardment of the growing film resulted in a decreaseof the Ti content in the films. The composition of the films deposited simultaneously onto a pair of substrates placed at the axis and at the periphery of the target did not depend on the substrate position at both low and high pressure. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2002
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