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Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds
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SYSNO ASEP 0185122 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds Author(s) Zajíčková, L. (CZ)
Janča, J. (CZ)
Peřina, Vratislav (UJF-V) RIDSource Title Thin Solid Films. - : Elsevier - ISSN 0040-6090
Roč. 338, - (1999), s. 49-59Number of pages 11 s. Language eng - English Country GB - United Kingdom Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders Annotation Plasma enhanced chemical vapour deposition (PECVD) of thinoxide films was investigated, changing electrical potential conditions at the substrate electrode (dc, rf coupled orpositive biased). Rf discharge at the frequency of 13.56 MHz was generated in a planar reactor with two internal electrodes. Silicon substrates were placed on the powered electrode. The octamethylcyclotetrasiloxane (OMTS) was chosenas a source of O-Si-O groups in order to test new possibilities in the silicon oxide depositions. The reflectance inthe visible, the transmittance in the infrared region, X-ray photoelectron spectra (XPS) and Rutherford backscattering method (RBS) analyses were applied to describe the deposition rate, the optical properties, the composition and the structure of the deposited films. The comparison among these four methods concerning the film composition and structure is discussed. The pronounced changes in the deposition rate with rf power or dc bias typical of every electrical potential condition were observed. However, other filmcharacteristics seemed to be very similar. The film optical parameters and the atomic composition were close to those of amorphous silicon dioxide. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2001
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