0185122 - UJF-V 20000293 RIV GB eng J - Článek v odborném periodiku
Zajíčková, L. - Janča, J. - Peřina, Vratislav
Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds.
Thin Solid Films. Roč. 338, - (1999), s. 49-59. ISSN 0040-6090. E-ISSN 1879-2731
Kód oboru RIV: BG - Jaderná, atomová a mol. fyzika, urychlovače
Impakt faktor: 1.101, rok: 1999

Plasma enhanced chemical vapour deposition (PECVD) of thinoxide films was investigated, changing electrical potential conditions at the substrate electrode (dc, rf coupled orpositive biased). Rf discharge at the frequency of 13.56 MHz was generated in a planar reactor with two internal electrodes. Silicon substrates were placed on the powered electrode. The octamethylcyclotetrasiloxane (OMTS) was chosenas a source of O-Si-O groups in order to test new possibilities in the silicon oxide depositions. The reflectance inthe visible, the transmittance in the infrared region, X-ray photoelectron spectra (XPS) and Rutherford backscattering method (RBS) analyses were applied to describe the deposition rate, the optical properties, the composition and the structure of the deposited films. The comparison among these four methods concerning the film composition and structure is discussed. The pronounced changes in the deposition rate with rf power or dc bias typical of every electrical potential condition were observed. However, other filmcharacteristics seemed to be very similar. The film optical parameters and the atomic composition were close to those of amorphous silicon dioxide.
Trvalý link: http://hdl.handle.net/11104/0081539