Number of the records: 1  

Boron electrical activation in dual B+N and B+Ar ion-implanted Si

    1.
    SYSNO ASEP0183956
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JOstatní články
    TitleBoron electrical activation in dual B+N and B+Ar ion-implanted Si
    Author(s) Odzhaev, V. B. (XX)
    Popok, V. N. (XX)
    Prosolovich, V. S. (XX)
    Hnatowicz, Vladimír (UJF-V) RID
    Source TitleApplied Physics A - Materials Science & Processing. - : Springer - ISSN 0947-8396
    Roč. 62, - (1996), s. 355-358
    Languageeng - English
    CountryDE - Germany
    R&D ProjectsKSK1010601 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    WorkplaceNuclear Physics Institute
    ContactMarkéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228
    Year of Publishing1998

Number of the records: 1  

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