Number of the records: 1  

Annealing of radiation defects in dual-implanted silicon

  1. 1.
    0183955 - UJF-V 970059 RIV GB eng J - Journal Article
    Kozlov, I. P. - Odzhaev, V. B. - Popok, V. N. - Hnatowicz, Vladimír
    Annealing of radiation defects in dual-implanted silicon.
    Semiconductor Science and Technology. Roč. 11, - (1996), s. 355-358. ISSN 0268-1242. E-ISSN 1361-6641
    R&D Projects: GA AV ČR KSK1010601
    Impact factor: 1.318, year: 1996
    Permanent Link: http://hdl.handle.net/11104/0080414


     
     

Number of the records: 1  

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