Number of the records: 1
Annealing of radiation defects in dual-implanted silicon
- 1.0183955 - UJF-V 970059 RIV GB eng J - Journal Article
Kozlov, I. P. - Odzhaev, V. B. - Popok, V. N. - Hnatowicz, Vladimír
Annealing of radiation defects in dual-implanted silicon.
Semiconductor Science and Technology. Roč. 11, - (1996), s. 355-358. ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA AV ČR KSK1010601
Impact factor: 1.318, year: 1996
Permanent Link: http://hdl.handle.net/11104/0080414
Number of the records: 1