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Dual implantation of Si with boron and argon ions

  1. SYS0183382
    LBL
      
    01509nam^^2200289^^^450
    005
      
    20240103175843.0
    101
    0-
    $a eng
    101
    0-
    $d eng
    102
      
    $a DE
    200
    1-
    $a Dual implantation of Si with boron and argon ions
    463
    -1
    $1 001 cav_un_epca*0257421 $1 011 $a 0031-8965 $1 200 1 $a Physica Status Solidi A $e Applied Research $v Roč. 141, - (1994), s. 93-98
    700
    -1
    $3 cav_un_auth*0038553 $a Popok $b V. $y CZ $4 070
    701
    -1
    $3 cav_un_auth*0100914 $a Hnatowicz $b Vladimír $p UJF-V $w Research with Beams of Ions and Neutrons $4 070 $T Ústav jaderné fyziky AV ČR, v. v. i.
    701
    -1
    $3 cav_un_auth*0100952 $a Kvítek $b Jiří $p UJF-V $4 070 $T Ústav jaderné fyziky AV ČR, v. v. i.
    701
    -1
    $3 cav_un_auth*0219973 $a Švorčík $b V. $y CZ $4 070
    701
    -1
    $3 cav_un_auth*0017922 $a Rybka $b V. $y CZ $4 070

Number of the records: 1  

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