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Properties of Recrystallized Amorphous Silicon Prepared by XeCl Excimer Laser Irradiation
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SYSNO 0174076 Title Properties of Recrystallized Amorphous Silicon Prepared by XeCl Excimer Laser Irradiation Author(s) Ulrych, Ivo (FZU-D)
El-Kader, K. M. A. (FZU-D)
Cháb, Vladimír (MU-W)
Kočka, Jan (FZU-D) RID, ORCID, SAI
Přikryl, Petr (MU-W) SAI
Vydra, V. (CZ)
Černý, R. (CZ)Source Title Proceedings of the Symposium "Semiconductor Processing and Characterization with Lasers". s. 6. -, 1994 Conference Semiconductor Processing and Characterization with Lasers, Stuttgart, 18.04.1994-20.04.1994 Document Type Konferenční příspěvek (zahraniční konf.) Grant IA11064 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) IA11066 GA ČR - Czech Science Foundation (CSF) GA202/93/2383 GA ČR - Czech Science Foundation (CSF) GA202/94/1801 GA ČR - Czech Science Foundation (CSF) IAA110433 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) IA101433 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) Language eng Country DE Permanent Link http://hdl.handle.net/11104/0071093
Number of the records: 1