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Properties of Recrystallized Amorphous Silicon Prepared by XeCl Excimer Laser Irradiation
- 1.ULRYCH, Ivo, EL-KADER, K. M. A., CHÁB, Vladimír, KOČKA, Jan, PŘIKRYL, Petr, VYDRA, V., ČERNÝ, R. Properties of Recrystallized Amorphous Silicon Prepared by XeCl Excimer Laser Irradiation. In: Proceedings of the Symposium "Semiconductor Processing and Characterization with Lasers". 1994, s. 6.
Number of the records: 1