Number of the records: 1  

Properties of Recrystallized Amorphous Silicon Prepared by XeCl Excimer Laser Irradiation

  1. 1.
    0174076 - MU-W 950008 RIV DE eng C - Conference Paper (international conference)
    Ulrych, Ivo - El-Kader, K. M. A. - Cháb, Vladimír - Kočka, Jan - Přikryl, Petr - Vydra, V. - Černý, R.
    Properties of Recrystallized Amorphous Silicon Prepared by XeCl Excimer Laser Irradiation.
    Proceedings of the Symposium "Semiconductor Processing and Characterization with Lasers". 1994, s. 6.
    [Semiconductor Processing and Characterization with Lasers. Stuttgart (DE), 18.04.1994-20.04.1994]
    R&D Projects: GA AV ČR IA11064; GA ČR IA11066; GA ČR GA202/93/2383; GA ČR GA202/94/1801; GA AV ČR IAA110433; GA AV ČR IA101433
    Permanent Link: http://hdl.handle.net/11104/0071093
     

Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.