Pulsed laser deposition of pure and praseodymium-doped Ge-Ga-Se amorphous chalcogenide films

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SYSNO ASEP	0161382
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Pulsed laser deposition of pure and praseodymium-doped Ge-Ga-Se amorphous chalcogenide films
Author(s)	Němec, Petr (SLCHPL-S) Frumar, M. (CZ) Frumarová, Božena (SLCHPL-S) Jelínek, Miroslav (FZU-D)_{RID, ORCID} Lančok, Ján (FZU-D)_{RID, ORCID} Jedelský, J. (CZ)
Source Title	Optical Materials. - : Elsevier - ISSN 0925-3467 Roč. 15, - (2000), s. 191-197
Number of pages	7 s.
Language	eng - English
Country	NL - Netherlands
Subject RIV	CA - Inorganic Chemistry
R&D Projects	GA203/98/0103 GA ČR - Czech Science Foundation (CSF)
	KSK2050602 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z4050913 - UMCH-V
Description in English	Pure and Pr - doped thin films of Ge30Ga5Se65 amorphous systemwere prepared by the pulsed laser deposition (PLD) technique.The composition of the prepared films was close to the compositionof the used targets of bulk chalcogenide glasses. Two luminiscencebands near 1340 and 1610 nm were observed in the emission spectraof Pr - doped thin films.
Workplace	Joint Laboratory of Solid State Chemistry (UP and ASCR) (until 2003)
Contact	Táňa Tonarová, slchpl@upce.cz, Tel.: 466 036 150
Year of Publishing	2001

Number of the records: 1