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Evaluation of GaAs and InP MSM detection of pulsed X-ray emission from laser plasmas
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SYSNO ASEP 0134620 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Evaluation of GaAs and InP MSM detection of pulsed X-ray emission from laser plasmas Author(s) Ryc, L. (PL)
Dubecky, F. (SK)
Pfeifer, Miroslav (FZU-D) RID, ORCID, SAI
Pura, B. (PL)
Riesz, F. (HU)
Slysz, W. (PL)Source Title Proceedings of the Semiconducting and Insulating Materials Conference (SIMC-XII). - Bratislava : XX, 2002 Pages s. x-x Number of pages 2 s. Action Semiconducting and Insulating Materials Conference /12./ Event date 30.06.2002-05.07.2002 VEvent location Smolenice Castle Country SK - Slovakia Event type WRD Language eng - English Country SK - Slovakia Keywords x-ray diagnostics ; time characteristics ; semiconductor detectors Subject RIV BL - Plasma and Gas Discharge Physics R&D Projects LN00A100 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z1010921 - FZU-D Annotation Fast response GaAs and InP x- ray photodiodes was evaluated. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2004
Number of the records: 1