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Basic features of transport in microcrystalline silicon
- 1.0134596 - FZU-D 20030496 RIV NL eng J - Journal Article
Kočka, Jan - Fejfar, Antonín - Stuchlíková, The-Ha - Stuchlík, Jiří - Fojtík, Petr - Mates, Tomáš - Rezek, Bohuslav - Luterová, Kateřina - Švrček, Vladimír - Pelant, Ivan
Basic features of transport in microcrystalline silicon.
Solar Energy Materials and Solar Cells. Roč. 78, - (2003), s. 493-512. ISSN 0927-0248. E-ISSN 1879-3398
R&D Projects: GA AV ČR IAA1010809; GA AV ČR IAB2949101; GA ČR GA202/98/0669
Institutional research plan: CEZ:AV0Z1010914
Keywords : charge transport * microcrystalline silicon * grain boundaries
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.188, year: 2003
A simple model based on the concept of changes of transport path for description of the observed phenomena is reviewed and its consquences for charge collection in microcrystalline based solar cells are discussed.
Permanent Link: http://hdl.handle.net/11104/0032492
Number of the records: 1