0134447 - FZU-D 20030347 RIV RU eng J - Journal Article
Moiseev, K. D. - Mikhailova, M. P. - Yakovlev, Yu. P. - Oswald, Jiří - Hulicius, Eduard - Pangrác, Jiří - Šimeček, Tomislav
Electroluminescence in a semimetal channel at a single broken-gap heterointerface of type II.
Semiconductors. Roč. 37, č. 10 (2003), s. 1185-1189. ISSN 1063-7826. E-ISSN 1090-6479
Grant - others:Russian Fondation for Basic Research(RU) 02-02-17633; GLADIS(XE) IST-2001-35178
Institutional research plan: CEZ:AV0Z1010914
Keywords : GaInAsSb * InAs * electroluminescence * broken-gap * II type heterointerface * semimetal channel
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.643, year: 2003

The radiative recombination at the broken-gap p-GaInAsSb/p-InAs type-II interface was investigated in the temperature range of 4-100K.Two electroluminescence bands at 0.37 eV and 0.40 eV were observed. The first EL maximum was ascribed to recombination of electrons from semimetal channel at the interface with holes on deep acceptor level at the interface. The second EL maximum is connecected with the recombination in bulk InAs.
Permanent Link: http://hdl.handle.net/11104/0032349