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Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy

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    0134412 - FZU-D 20030312 RIV US eng J - Journal Article
    Rezek, Bohuslav - Mates, Tomáš - Stuchlík, Jiří - Kočka, Jan - Stemmer, A.
    Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy.
    Applied Physics Letters. Roč. 83, č. 9 (2003), s. 1764-1766. ISSN 0003-6951. E-ISSN 1077-3118
    Institutional research plan: CEZ:AV0Z1010914
    Keywords : hydrogenated amorphous silicon * atomic force microscopy * Kelvin probe microscopy
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 4.049, year: 2003

    Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy.
    Permanent Link: http://hdl.handle.net/11104/0032315


     
     

Number of the records: 1  

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