Number of the records: 1
Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy
- 1.0134412 - FZU-D 20030312 RIV US eng J - Journal Article
Rezek, Bohuslav - Mates, Tomáš - Stuchlík, Jiří - Kočka, Jan - Stemmer, A.
Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy.
Applied Physics Letters. Roč. 83, č. 9 (2003), s. 1764-1766. ISSN 0003-6951. E-ISSN 1077-3118
Institutional research plan: CEZ:AV0Z1010914
Keywords : hydrogenated amorphous silicon * atomic force microscopy * Kelvin probe microscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 4.049, year: 2003
Charge storage in undoped hydrogenated amorphous silicon by ambient atomic force microscopy.
Permanent Link: http://hdl.handle.net/11104/0032315
Number of the records: 1