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On the optical properties of amorphous Ge-Ga-Se films prepared by pulsed laser deposition

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    0134365 - FZU-D 20030263 RIV NL eng J - Journal Article
    Němec, F. - Jedelský, J. - Frumar, M. - Munzar, M. - Jelínek, Miroslav - Lančok, Ján
    On the optical properties of amorphous Ge-Ga-Se films prepared by pulsed laser deposition.
    Journal of Non-Crystalline Solids. 326-327, - (2003), s. 53-57. ISSN 0022-3093. E-ISSN 1873-4812
    R&D Projects: GA MŠMT LN00A028; GA ČR GA203/00/0085
    Institutional research plan: CEZ:AV0Z1010914
    Keywords : amorphous Ge-Ga-Se * optical properties * pulsed laser deposition
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.563, year: 2003

    Amorphous Ge-Ga-Se thin films(pure and disprosium doped) were prepared by the laser deposition technique using different energy of the lasre beam pulses. The effects of exposure and thermal annealing below the glass transition temperature on the optical parameters (index of refraction, optical band gap) and the thickness of as-deposited chalcogenide thin films were studied.
    Permanent Link: http://hdl.handle.net/11104/0032270


     
     

Number of the records: 1  

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