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Lattice constant in diluted magnetic semiconductors (Ga, Mn)As

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    0134208 - FZU-D 20030101 RIV US eng J - Journal Article
    Mašek, Jan - Kudrnovský, Josef - Máca, František
    Lattice constant in diluted magnetic semiconductors (Ga, Mn)As.
    Physical Review. B. Roč. 67, č. 15 (2003), s. 153203-1 - 153203-4. ISSN 0163-1829
    R&D Projects: GA AV ČR IAA1010214; GA ČR GA202/00/0122
    Institutional research plan: CEZ:AV0Z1010914
    Keywords : diluted magnetic semiconductors * total energy * impurities
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 2.962, year: 2003

    LDA calculations are used to find compositional dependence of the lattice constant of (Ga, Mn)As with defect. Only the presence of the defects can explain the observed expansion of the lattice.
    Permanent Link: http://hdl.handle.net/11104/0032123

     
     

Number of the records: 1  

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