InAs .delta.-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy

0134200 - FZU-D 20030093 RIV NL eng J - Journal Article
Hazdra, P. - Voves, J. - Oswald, Jiří - Hulicius, Eduard - Pangrác, Jiří - Šimeček, Tomislav
InAs .delta.-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy.
Journal of Crystal Growth. Roč. 248, - (2003), s. 328-332. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA AV ČR IAA1010806
Institutional research plan: CEZ:AV0Z1010914; CEZ:MSM 212300014
Keywords : electroluminescence * isovalent .delta.-layers * photocurrent spectroscopy * MOVPE * InAs/GaAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.414, year: 2003

Photocurrent, electroluminescence, and photoluminescence spectroscopy were used for the characterisation of laser structures containing InAs .delta.-layers in GaAs matrix surrounded by AlGaAs waveguide and grown by low-pressure metal organic vapour phase epitaxy.
Permanent Link: http://hdl.handle.net/11104/0032116