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Importance of the transport isotropy in ćc:Si:H thin films for solar cells deposited at low substrate temperature

  1. 1.
    SYSNO0134050
    TitleImportance of the transport isotropy in ćc:Si:H thin films for solar cells deposited at low substrate temperature
    Author(s) Švrček, Vladimír (FZU-D)
    Fejfar, Antonín (FZU-D) RID, ORCID, SAI
    Fojtík, Petr (FZU-D)
    Mates, Tomáš (FZU-D) RID, ORCID
    Poruba, Aleš (FZU-D) RID
    Stuchlíková, Hana (FZU-D)
    Pelant, Ivan (FZU-D) RID, ORCID, SAI
    Kočka, Jan (FZU-D) RID, ORCID, SAI
    Nasuno, Y. (JP)
    Kondo, M. (JP)
    Matsuda, A. (JP)
    Source Title Journal of Non-Crystalline Solids. 299-302, - (2002), s. 395-399. - : Elsevier
    Document TypeČlánek v odborném periodiku
    CEZAV0Z1010914 - FZU-D
    Languageeng
    CountryNL
    Keywords ćcSi:H thin films * optoelectronic properties
    Permanent Linkhttp://hdl.handle.net/11104/0031991
     

Number of the records: 1  

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