Importance of the transport isotropy in ćc:Si:H thin films for solar cells deposited at low substrate temperature

Name: Importance of the transport isotropy in ćc:Si:H thin films for solar cells deposited at low substrate temperature
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Švrček, Vladimír; Fejfar, Antonín; Fojtík, Petr; Mates, Tomáš; Poruba, Aleš; Stuchlíková, Hana; Pelant, Ivan; Kočka, Jan; Nasuno, Y.; Kondo, M.; Matsuda, A.

Number of the records: 1

Importance of the transport isotropy in ćc:Si:H thin films for solar cells deposited at low substrate temperature

1.

SYSNO ASEP	0134050
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Importance of the transport isotropy in ćc:Si:H thin films for solar cells deposited at low substrate temperature
Author(s)	Švrček, Vladimír (FZU-D) Fejfar, Antonín (FZU-D)_{RID, ORCID, SAI} Fojtík, Petr (FZU-D) Mates, Tomáš (FZU-D)_{RID, ORCID} Poruba, Aleš (FZU-D)_RID Stuchlíková, Hana (FZU-D) Pelant, Ivan (FZU-D)_{RID, ORCID, SAI} Kočka, Jan (FZU-D)_{RID, ORCID, SAI} Nasuno, Y. (JP) Kondo, M. (JP) Matsuda, A. (JP)
Source Title	Journal of Non-Crystalline Solids. - : Elsevier - ISSN 0022-3093 299-302, - (2002), s. 395-399
Number of pages	5 s.
Language	eng - English
Country	NL - Netherlands
Keywords	ćcSi:H thin films ; optoelectronic properties
Subject RIV	BM - Solid Matter Physics ; Magnetism
CEZ	AV0Z1010914 - FZU-D
Annotation	The influence of the substrate temperature on structure and optoelectronic properties in the range from 150 to 350_oC was explored.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2003

Number of the records: 1