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Importance of the transport isotropy in ćc:Si:H thin films for solar cells deposited at low substrate temperature
- 1.ŠVRČEK, V., FEJFAR, A., FOJTÍK, P., MATES, T., PORUBA, A., STUCHLÍKOVÁ, H., PELANT, I., KOČKA, J., NASUNO, Y., KONDO, M., MATSUDA, A. Importance of the transport isotropy in ćc:Si:H thin films for solar cells deposited at low substrate temperature. Journal of Non-Crystalline Solids. 2002, 299-302(-), 395-399. ISSN 0022-3093. E-ISSN 1873-4812.
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