0133858 - FZU-D 20020037 RIV DE eng J - Journal Article
Pelant, Ivan - Fojtík, Petr - Luterová, Kateřina - Kočka, Jan - Poruba, Aleš - Štěpánek, J.
Electric-field-enhanced metal-induced crystallization of hydrogenated amorphous silicon at room temperature.
Applied Physics A - Materials Science & Processing. Roč. 74, - (2002), s. 557-560. ISSN 0947-8396. E-ISSN 1432-0630
R&D Projects: GA AV ČR IAA1010809; GA ČR GA202/98/0669
Institutional research plan: CEZ:AV0Z1010914
Keywords : crystallization * hydrogenated amorphous silicon * metal-induced crystallization
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.231, year: 2002

A novel simple method of crystallization of hydrogenated amorphous siliocm thin films is described. We studied a metal-induced crystallization enhanced by a dc electric field in sandwich p + -i-n + structures.
Permanent Link: http://hdl.handle.net/11104/0000638